Silicon carbide diodes for neutron detection

In the last two decades we have assisted to a rush towards finding 3He-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems applications like nuclear war-head screening or preventing illicit traffic radiological materials. Semiconductor detectors stand among strongest contenders, particularly those based on materials possessing wide band gap silicon carbide (SiC). We review workings SiC-based neutron detectors, along with several issues related material properties, device fabrication and testing. paper summarizes experimental theoretical work carried out within E-SiCure project (Engineering Silicon Carbide for Border Port Security), co-funded by NATO Science Peace Security Programme. main goal was development technologies support radiation-hard special Among achievements, successful Schottky barrier identification carrier life-time-limiting defects in SiC active areas, either already present pristine devices introduced upon exposure radiation fields. physical processes involved detection are described. Material properties as well epitaxial growth addressed. presence as-grown material, ionizing reported. finally describe experiments at Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where set were tested, some which being equipped thermal converter layer. show that despite existence large room improvement, diodes state-of-the-art 4H-SiC closing between gas- semiconductor-based regarding their sensitivity.